发明名称 Electrical interconnection structures including stress buffer layers
摘要 Provided are electrical connection structures and methods of fabricating the same. The structures may include a substrate including a bonding pad region provided with a bonding pad and a fuse region provided with a fuse, an insulating layer provided on the substrate and including a bonding pad opening exposing the bonding pad and a fuse opening exposing the fuse region, a connection terminal provided in the bonding pad region and electrically connected to the bonding pad, and a protection layer provided on the insulating layer including a first protection layer provided within the bonding pad region and a second protection layer in the fuse opening.
申请公布号 US8872306(B2) 申请公布日期 2014.10.28
申请号 US201313797655 申请日期 2013.03.12
申请人 Samsung Electronics Co., Ltd. 发明人 Jin Jeonggi;Park Jeong-woo;Choi Ju-il
分类号 H01L23/525;H01L23/48;H01L23/00;H01L23/31;H01L25/065;H01L23/29 主分类号 H01L23/525
代理机构 Myers Bigel Sibley & Sajovec, PA 代理人 Myers Bigel Sibley & Sajovec, PA
主权项 1. An electrical connection structure, comprising: a substrate including a first region provided with a bonding pad and a second region provided with a fuse; an insulating layer provided on the substrate including a first opening which exposes the bonding pad and a second opening which exposes the fuse; a connection terminal disposed in the first region and electrically connected to the bonding pad; and a protection layer provided on the insulating layer, the protection layer including a first portion which is disposed within the first region and a second portion which fills the second opening such that a surface of the insulating layer extending between the first and second regions is free of the protection layer and is coplanar with an upper surface of the second portion of the protection layer.
地址 KR