Integrated circuit structure having air-gap trench isolation and related design structure

摘要

A method of forming an integrated circuit structure includes: forming a vent via extending through a shallow trench isolation (STI) and into a substrate; selectively removing an exposed portion of the substrate at a bottom of the vent via to form an opening within the substrate, wherein the opening within the substrate abuts at least one of a bottom surface or a sidewall of the STI; and sealing the vent via to form an air gap in the opening within the substrate.

主权项

1. A transistor structure comprising:
a substrate; a shallow trench isolation (STI) located within the substrate; a base region overlying the STI; a collector region separated from the base region by the substrate; an air gap region within the substrate, the air gap region abutting at least one of a lower surface of the STI or a sidewall of the STI; and a cap layer sealing the air gap region.