发明名称 Active multi-gate micro-electro-mechanical device with built-in transistor
摘要 The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.
申请公布号 US8872240(B2) 申请公布日期 2014.10.28
申请号 US200913129280 申请日期 2009.11.18
申请人 Ecole Polytechnique Federale de Lausanne (EPFL) 发明人 Ionescu Mihai Adrian;Grogg Daniel
分类号 H01L29/84;H03H3/007;H03H9/24;H03H9/46;H03H9/02 主分类号 H01L29/84
代理机构 Sheridan Ross P.C. 代理人 Sheridan Ross P.C.
主权项 1. An active micro-electro-mechanical resonator comprising a vibrating body transistor with a source, a drain and a low doped body region connecting the source and the drain, and more than two fixed gates, wherein the transistor cooperates with each gate.
地址 CH