Photo-electric conversion device with current fluctuation suppression

摘要

A photo-electric conversion device comprises a pixel array in which a plurality of pixels, each including a photo-electric converter, are arrayed to form rows and columns; signal lines respectively corresponding to the columns of the pixel array; load transistors respectively corresponding to the signal lines; and capacitances respectively corresponding to the load transistors. Each signal line is connected to the pixels of the corresponding column. Each capacitance includes a first electrode and a second electrode. When viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter, the first electrode is arranged within a region which is surrounded by (i) the adjacent signal lines which are arranged closest to each other, (ii) the pixel array, and (iii) a virtual line connecting end portions of the adjacent signal lines, so as to not overlap the adjacent signal lines.

主权项

1. A photo-electric conversion device comprising:
a pixel array in which a plurality of pixels are arrayed to form rows and columns, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion; signal lines respectively corresponding to the columns of the pixel array, each of the signal lines being connected to the pixels of the corresponding column of the pixel array so as to transmit a signal output from each of the pixels of the corresponding column of the pixel array; load transistors respectively corresponding to the signal lines, each of the load transistors including a drain connected to the corresponding signal line and a source connected to a first reference potential line to which a first reference potential is applied; and capacitances respectively corresponding to the load transistors, each of the capacitances including a first electrode connected to a gate of the corresponding load transistor, and a second electrode connected to a second reference potential line to which a second reference potential is applied, wherein when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter, the first electrode is arranged within a region which is surrounded by (i) the adjacent signal lines which are arranged closest to each other, (ii) the pixel array, and (iii) a virtual line connecting end portions of the adjacent signal lines, so as to not overlap the adjacent signal lines.