High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy

摘要

Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.

主权项

1. A high purity nickel-vanadium alloy sputtering target for depositing thin films forming microcircuits of semiconductor devices, comprising:
a sputtering target body consisting of a non-magnetic Ni—V alloy having 7.2 wt % V that provides stable etching characteristics and that suppresses alpha emissions, said sputtering target body not including Ni8V intermetallic compound and having a structure formed by forging and rolling; said Ni—V alloy having a purity, excluding gas components, of at least 99.995 wt %, a variation of V content within 0.4%, an impurity content of 10 ppm or less of each of Cr, Al and Mg, and an impurity content of 1 ppb or less of each of U and Th.