发明名称 Lithography system, sensor and measuring method
摘要 Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element,using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams,electronically reading out resulting signals from said detectors after exposure thereof by said light beams,utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, andelectronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
申请公布号 USRE45206(E1) 申请公布日期 2014.10.28
申请号 US201313738947 申请日期 2013.01.10
申请人 Mapper Lithography IP B.V. 发明人 Kruit Pieter;Slot Erwin;Teepen Tijs Frans;Wieland Marco Jan-Jaco;Steenbrink Stijin Willem Herman Karel
分类号 H01J3/00 主分类号 H01J3/00
代理机构 Blakley Sokoloff Taylor & Zafman 代理人 Blakley Sokoloff Taylor & Zafman
主权项 1. A method of measuring properties of a massive amount of charged particle beams of a charged particle beam system in which the charged particle beams are simultaneously converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals for each beam individually from said detectors after exposure thereof by said light beams, utilizing said individual signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams individually, for one or more properties, based on said calculateddetermined property values, wherein determination of beam position and/or beam spot size is performed on the basis of signals resulting from a converted charged particle beam (4), thereby using a blocking element, configured to selectively partially and entirely block a beam, included at a known position relative to the converter while shifting the blocking element and the charged particle beam relative to each another by one or more known shifts, wherein the charged particle blocking element (6) is applied integrated with said converter element, and located on a top thereof, and wherein said detector element is appliedlight sensitive detectors are integrated with said converter element, and located on a bottom thereof.
地址 Delft NL