发明名称 Reference library generation method for methods of inspection, inspection apparatus and lithographic apparatus
摘要 A library of model diffraction patterns is generated where each represents a diffraction pattern expected from a target structure defined by a set of parameters and having a first part and a second part, the first part comprising a scattering object. The target structure is defined. The scattering effect of the first part of the target structure is defined by a set of first part parameters, for a plurality of different sets of first part parameters. The scattering effect of the second part of the target structure defined by a set of second part parameters, for a plurality of different sets of second part parameters. The results of the calculations is used to calculate the model diffraction patterns.
申请公布号 US8875078(B2) 申请公布日期 2014.10.28
申请号 US201213537781 申请日期 2012.06.29
申请人 ASML Netherlands B.V. 发明人 Pisarenco Maxim;Setija Irwan Dani
分类号 G06F17/50;G03F7/20 主分类号 G06F17/50
代理机构 Sterne, Kessler, Goldstein & Fox P.L.L.C. 代理人 Sterne, Kessler, Goldstein & Fox P.L.L.C.
主权项 1. A method of generating a library of model diffraction patterns, each representing a diffraction pattern expected from a target structure defined by a set of parameters and having a first part and a second part, the first part comprising a scattering object, the method comprising: calculating, using a processing unit, a first scattering effect of the first part of the target structure defined by a set of first part parameters for a plurality of different sets of first part parameters; calculating, using the processing unit, a second scattering effect of the second part of the target structure defined by a set of second part parameters for a plurality of different sets of second part parameters; and combining, using a processing unit, results of the calculatings to calculate model diffraction patterns, wherein the results of the calculating a first scattering effect are stored as they are calculated, these stored results being subsequently combined with the results of the calculating a second scattering effect as the latter are calculated.
地址 Veldhoven NL