Semiconductor device formation

摘要

An apparatus of and method for making a semiconductor structure having a shallow trench isolation (STI) trench with a substantially v-shaped profile, that is the distance between top portions is greater than the distance between bottom portions of shallow trench isolation (STI) structure sidewalls adjacent to the trench, provides for substantially seamless and substantially void-free gate structures. The semiconductor structures are formed by implanting an implantation species into the sidewalls, which allows for the top portions of the sidewalls to be etched away at a greater rate than that of the bottom portions, resulting in the substantially v-shaped profile. And the substantially v-shaped profile allows for subsequent device layers to more easily and smoothly fill in the v-shaped trenches, due to a wider opening toward the tops of the trenches.

主权项

1. A method for manufacturing a semiconductor structure, the method comprising:
forming a trench in a semiconductor substrate, the trench defined by a trench base portion and sidewalls of adjacent shallow trench isolation structures; and forming implantation regions in one or more sidewalls of the adjacent shallow trench isolation structures, wherein the sidewalls are gradually sloped, and wherein a distance between top portions of the sidewalls is greater than a distance between the bottom portions of the sidewalls.