Semiconductor device

摘要

A semiconductor device includes element active portion X and element peripheral portion Y. An interlayer insulating film is formed on upper surfaces of portions X and Y. A source electrode connected to a p base region and n-type source region and a gate metal wiring formed annularly surrounding the source electrode are formed on element active portion X side upper surface of the interlayer insulating film. The gate metal wiring connects to a gate electrode. An organic protective film with openings is formed on a first main surface side upper surface of the semiconductor substrate, and the openings serve as a gate electrode pad partially exposing the gate metal wiring and a source electrode pad partially exposing the source electrode. An inorganic protective film formed between the gate metal wiring and the organic protective film covers the gate metal wiring. The semiconductor device is highly reliable.

主权项

1. A semiconductor device comprising an element active portion and an element peripheral portion provided in an outer periphery than the element active portion, wherein
(i) the element active portion comprises:
a second conductive type base region which is formed in a first conductive type semiconductor layer on a first main surface side of a semiconductor substrate;a first conductive type source region which is formed in the base region;a gate insulating film which is formed on the surface of the semiconductor substrate in the base region between the semiconductor layer and the source region;a gate electrode which is formed on the gate insulating film;an interlayer insulating film which is formed on the gate electrode;a source electrode which is formed on the interlayer insulating film and connected to the base region and the source region; andan annular gate metal wiring which is formed on the interlayer insulating film so as to surround the source electrode and which is electrically connected to the gate electrode; and (ii) the element peripheral portion comprises:
at least two guard rings of the second conductive type which are separately formed in the semiconductor layeran insulating layer which is formed on the first main surface of the semiconductor substrate;the interlayer insulating film which is formed on the insulating film;at least one annular field plate electrode which is formed on the interlayer insulating layer so as to surround the element active portion and which is electrically connected to the guide rings;an organic protective film with which the first main surface side upper surface of the semiconductor substrate is covered, and which is in contact with the interlayer insulating layer while having a first opening portion partially exposing the gate metal wiring and a second opening portion partially exposing the source electrode; andan inorganic protective film which is formed between the gate metal wiring and the organic protective film so as to cover the gate metal wiring.