发明名称 Light emitting element and light emitting device using the same
摘要 An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
申请公布号 US8872169(B2) 申请公布日期 2014.10.28
申请号 US201313737973 申请日期 2013.01.10
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kumaki Daisuke;Seo Satoshi
分类号 H01L29/08;H01L35/24;H01L51/00;H01L33/00;H01L51/50;H01L33/60;H01L27/32;H01L51/52 主分类号 H01L29/08
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A light emitting device comprising: a first electrode comprising a metal; a first layer over and in direct contact with the first electrode, the first layer comprising a first substance with a hole transporting property and a second substance with an electron accepting property with respect to the first substance; a second layer over and in direct contact with the first layer, the second layer comprising a third substance with an electron transporting property and a fourth substance with an electron donating property with respect to the third substance; a light emitting layer over the second layer; and a second electrode over the light emitting layer.
地址 Atsugi-shi, Kanagawa-ken JP
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