Pulse generator and ferroelectric memory circuit

摘要

A pulse generator circuit with ferroelectric memory element is disclosed that is optimized for printed, solution-processed thin film transistor processing. In certain embodiments, the circuit comprises dual thin film transistors that operate as a diode and resistor, respectively. Optionally, a third thin film transistor may be provided to operate as a pass transistor in response to an enable signal. The elements of the circuit are configured such that a rising pulse on an input node triggers an output pulse on an output node in the manner of a monostable multivibrator. The ferroelectric memory element is coupled to the output node such that a pulse on the output node may change a state of the ferroelectric memory element.

主权项

1. An electronic pulse-generator circuit and ferroelectric memory, comprising:
an input node; a capacitor communicatively connected to said input node and to a pulse line; a first thin film transistor having a channel formed of a first polarity solution-processed semiconductor material, a first side of said channel communicatively connected to a first voltage source, a second side of said channel communicatively connected to said pulse line, said first thin film transistor configured to function as a diode; a second thin film transistor having a channel formed of said first polarity solution-processed semiconductor material, a first side of said channel communicatively connected to said pulse line, a second side of said channel communicatively connected to a second voltage source, said second thin film transistor configured to function as a resistor; an output node communicatively connected to receive a pulse from said pulse line; and a ferroelectric memory element communicatively coupled to said output node such that a pulse on said output node may change a state of said ferroelectric memory element.