发明名称 High-side semiconductor-switch low-power driving circuit and method
摘要 A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch.
申请公布号 US8872552(B2) 申请公布日期 2014.10.28
申请号 US201213631928 申请日期 2012.09.29
申请人 Infineon Technologies Austria AG 发明人 Asam Michael;Herrmann Helmut
分类号 H03K3/00 主分类号 H03K3/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A high-side semiconductor-switch driver circuit comprising: a controllable charge pump circuit operable to control a high side semiconductor switch, wherein the high side semiconductor switch has a control terminal and the charge pump circuit provides a current to the control terminal of the high side semiconductor switch for switching the high side semiconductor switch; and an evaluation circuit coupled to the charge pump circuit, the evaluation circuit operable to quantify a voltage at the control terminal of the high side semiconductor switch by comparing the voltage at the control terminal of the high side semiconductor switch with a supply voltage at a conduction terminal of the high side semiconductor switch and to control the charge pump circuit dependent on the quantified voltage so that the current provided by the charge pump circuit is increased when the quantified voltage indicates that the current is not sufficient to switch the high side semiconductor switch.
地址 Villach AT