Patterned memory page activation

摘要

Row activation operations within a memory component are carried out with respect to patterns of storage cells that constitute a fraction of a row and that have been predicted or predetermined to yield a succession of page hits, thus reducing activation power consumption without significantly increasing memory latency. The patterns of activated storage cells may be predicted or predetermined statically, for example, in response to user input or configuration settings that specify activation patterns to be applied in response to memory request traffic meeting various criteria, or dynamically through run-time evaluation of sequences of memory access requests.

主权项

1. A method of operation within a memory component, the method comprising:
asserting a control signal on a word line to switchably conduct data signals from at least a portion of a row of storage cells to respective sense amplifiers; and enabling a selected fraction of the sense amplifiers to latch a corresponding fraction of the data signals, the selected fraction of the sense amplifiers corresponding to one of a plurality of different activation patterns, including at least one pattern that activates sense amplifiers corresponding to non-contiguous column addresses within the row of storage cells.