Semiconductor device and method for fabricating the same

摘要

A semiconductor device and a method for fabricating the same are provided to prevent a floating body effect and reduce coupling capacitance between buried bit lines. The semiconductor device comprises a first pillar disposed over a semiconductor substrate and including a vertical channel region, a bit line located in the lower portion of the vertical channel region inside the first pillar and a semiconductor layer extended from the semiconductor substrate to one sidewall of the first pillar.

主权项

1. A semiconductor device, comprising:
a first pillar disposed over a semiconductor substrate and including a first vertical channel region; a second pillar disposed over the semiconductor substrate and adjacent to the first pillar, the second pillar including a second vertical channel region; a bit line located in lower portions of the first and second vertical channel regions; and a semiconductor layer extending from the semiconductor substrate to a first sidewall of the first pillar and a first sidewall of the second pillar adjacent to the first sidewall of the first pillar, the semiconductor layer connecting the semiconductor substrate, the first vertical channel and the second vertical channel, wherein the semiconductor layer has an upper surface extending in a single plane between the first sidewall of the first pillar and the first sidewall of the second pillar.