Field effect transistor fabrication from carbon nanotubes

摘要

Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.

主权项

1. A field effect transistor, comprising:
an insulating material defining a pore having a wall, the pore including a catalyst for growing a carbon nanotube; a carbon nanotube grown from the catalyst within the pore, the nanotube having two ends; a drain in electrical communication with one end of said nanotube; a source in electrical communication with the other end of said nanotube; and a gate surrounding a portion of said nanotube intermediate of the two ends; wherein the pore has a length spanning from a closed end to an opened end, and said nanotube is grown from a location on the wall of the pore beginning along the length intermediate of the closed end and the opened end.