发明名称 SOLID STATE IMAGE SENSOR, DRIVE METHOD THEREOF, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of a spot of strong electric field on a substrate in a period other than a read-out period.SOLUTION: A photoelectric conversion element generates a charge corresponding to the luminous energy of incident light and accumulates the generated charge therein. A transfer transistor (TRG) transfers the charge accumulated by the photoelectric conversion element. A first charge-voltage conversion unit converts the charge transferred by the transfer transistor (TRG) into a voltage. A substrate electrode of a MOS capacitor (region of a second charge-voltage conversion unit facing a gate electrode) connects to the first charge-voltage conversion unit via a connection transistor (FDG). A voltage different between a read-out period for a voltage signal, etc., converted by the first charge-voltage conversion unit and a period other than the read-out period is applied to a gate electrode of the MOS capacitor. The present disclosure can be applied, for example, to a CMOS image sensor, etc.
申请公布号 JP2014204364(A) 申请公布日期 2014.10.27
申请号 JP20130080487 申请日期 2013.04.08
申请人 SONY CORP 发明人 SAKANO YORITO
分类号 H04N5/3745;H01L27/146 主分类号 H04N5/3745
代理机构 代理人
主权项
地址