| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can electrically separate tunnel transistors from each other, which are formed on a bulk semiconductor substrate.SOLUTION: According to an embodiment, a semiconductor device comprises: a gate electrode formed on a semiconductor substrate between first and second element isolation insulation films via a gate insulation film; first main terminal area of a first conductivity type and a second main terminal area of a second conductivity type opposite to the first conductivity type, which are formed in the semiconductor substrate so as to sandwich the gate electrode; a diffusion layer of the second conductivity type, which contacts the first and second element isolation insulation films and has a top face at a position deeper than under surfaces of the first and second main terminal areas; a first well area of the first conductivity type, which is formed between the first main terminal area and the diffusion layer; and a second well area of the first conductivity type, which is formed between the second main terminal area and the diffusion layer and has an impurity concentration higher than that of the first well area. |
