PROCESS OF MANUFACTURING WIDE-GAP SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pseudo CMOS circuit and a p-channel junction FET composed of a wide-gap semiconductor capable of stably operating even under high temperature environment.SOLUTION: The process of manufacturing a pseudo CMOS device is constituted of a junction FET that drives holes inside a bulk and an n-channel MOS concerning a wide-gap semiconductor substrate.