| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve an ESD protection circuit against a fuse element in a semiconductor device.SOLUTION: An ESD protection circuit 100 against a fuse element 10 comprises a first transistor 110, a diode 120 and a control circuit 130 for performing ON/OFF control on the first transistor. The first transistor 110 includes a source and a drain which are respectively connected to a ground terminal TG and a fuse blowing terminal TF. The diode 120 includes a cathode and an anode which are respectively connected to the fuse blowing terminal TF and a first node N1. The control circuit 130 is composed so as to turn ON the first transistor 110 in response to voltage rise of the first node N1 associated with application of ESD surge on the fuse blowing terminal TF and turn OFF the first transistor 110 in other cases.</p> |
