发明名称 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
摘要 A memory device includes: a memory array; a nonvolatile memory to store a fail address indicating a position of a fail memory cell in the memory array; a remaining memory determining part generating remaining capacity information indicating a memory capacity which is not used in the nonvolatile memory; and an output circuit to output the remaining capacity information.
申请公布号 KR20140124547(A) 申请公布日期 2014.10.27
申请号 KR20130042204 申请日期 2013.04.17
申请人 SK HYNIX INC. 发明人 SONG, CHOUNG KI
分类号 G11C29/00;G11C16/06 主分类号 G11C29/00
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