发明名称 SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREFOR
摘要 <p>A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.</p>
申请公布号 KR101453123(B1) 申请公布日期 2014.10.27
申请号 KR20100024310 申请日期 2010.03.18
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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