| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology favorable to reduction of variation in a plurality of spaces formed in a semiconductor device for isolation of elements.SOLUTION: A semiconductor device manufacturing method comprises: a process of processing a first surface of a semiconductor substrate having the first surface and a second surface to form a groove having a first part and a second part located between the first part and a surface including the first surface; a process of filling the second part with an insulator so as to leave a space at the first part and block the groove; and a process of forming a plurality of elements between the first surface and the second surface. The space and the insulator form element isolation. |
