| 摘要 |
<p>A capacitive sensing system with a sensor having a thin film structure. The thin film structure includes a first insulating layer and a first conductive film having a sensing electrode formed on a first surface of the first insulating layer and a second conductive film having a back guard electrode. The back guard electrode is formed in a single plane and has a peripheral portion in the same plane, and is disposed on a second surface of the first insulating layer and a first surface of a second insulating layer or protective layer. The peripheral portion of the back guard electrode extends beyond the sensing electrode to form a side guard electrode which substantially or completely surrounds the sensing electrode.</p> |
