| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which allows for suppression of destruction of a wall forming a resist pattern and change in the line width of the pattern, when cleaning a substrate after development.SOLUTION: A development step of supplying a developer to the surface of a substrate after exposure in order to form a resist pattern, a cleaning step of supplying a cleaning solution to the surface of a substrate, and removing the residue produced by development from the substrate, a replacement step of supplying a replacement liquid, containing an infiltration retarder for retarding infiltration of a resist composing the resist pattern into the wall and having a surface tension of 50 mN/m or less, to the surface of a substrate, and replacing the cleaning solution on the substrate by the replacement liquid; and a drying step of forming a drying region by supplying gas to the central part of the substrate while rotating the substrate, and drying the surface of a substrate by spreading the drying region to the peripheral edge of the substrate by centrifugal force are performed. |
