| 摘要 |
<p>A method for processing a substrate having an insulating film in at least a portion of a surface thereof, a source portion, a drain portion, and a gate portion thereon, and a monocrystalline silicon-based structure in a gate channel disposed under the gate portion. The method for processing a substrate includes: growing amorphous doped silicon and monocrystalline doped silicon by supplying at least silicon-containing gas and doping gas; and monocrystallizing the amorphous doped silicon by using the monocrystalline doped silicon as a seed by heating the amorphous doped silicon and the monocrystalline doped silicon.</p> |
