SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To decrease the number of impurity ion implantation processes.SOLUTION: A semiconductor device comprises: a first transistor TR1 including a first source region SOU1 and a first drain region DRN1 which have a first conductivity type; and a second transistor TR2 including a second source region SOU2 and a second drain region DRN2 which have a second conductivity type. The first transistor TR1 is formed in a first deep well DW1 of the second conductivity type. The second drain region DRN2 of the second transistor TR2 is formed in a second deep well DW2 of the second conductivity type. The first deep well DW1 and the second deep well DW2 are formed in the same ion implantation process. For this reason, when considering a depth with reference to a surface of a semiconductor layer EPI, a peak position of an impurity concentration of the second deep well DW2 is located at a position of not less than 90% and not more than 110% of a peak position of the first deep well DW1.