发明名称 PHASE-LOCKED LONG-WAVELENGTH BAND SURFACE-EMITTING LASER
摘要 <p>PROBLEM TO BE SOLVED: To accomplish an in-phase surface-emitting laser array element capable of high-speed direct modulation and high optical output.SOLUTION: A surface-emitting laser comprises: an InP substrate; a first reflector on the InP substrate; a first spacer layer and an active layer on the first reflector; a second spacer layer on the active layer; a tunnel junction layer arranged on one surface in the second spacer layer; and a second reflector on the spacer layer. The tunnel junction layer includes a plurality of elements of a surface-emitting laser array, and a layer disposed between the plurality of elements and having an optical gain.</p>
申请公布号 JP2014203894(A) 申请公布日期 2014.10.27
申请号 JP20130077206 申请日期 2013.04.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OOISO YOSHITAKA
分类号 H01S5/183 主分类号 H01S5/183
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