SEMICONDUCTOR DEVICE HAVING A MULTI FLOATING ISLAND

摘要

The present invention relates to a semiconductor device having a multi-FLI structure. According to an embodiment of the present invention, the semiconductor device having the multi-FLI structure comprises: an N type drift region formed on an N type substrate; a P-base region formed on the N type drift region; a source electrode formed on the N type drift region to come into contact with the P-base and an N+ region; a gate electrode formed on the N type drift region; a drain electrode formed on a lower part of the N type substrate; and a plurality of floating P type regions formed on the N type drift region, wherein a concentration of an N type impurity included in an N type drift layer is determined based on a breakdown voltage corresponding to a specific semiconductor device where there is no floating P type region, and a concentration of the N type drift layer is Nd and the number of the floating P type regions.