发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing apparatus which allow for desired plasma processing by gradually changing the dissociation state of the plasma progressively with the passage of the plasma processing time.SOLUTION: In a plasma processing method using a plasma processing apparatus including a plasma processing chamber performing plasma processing of a sample, a first high frequency power supply supplying a first high frequency power for plasma generation, and a second high frequency power supply supplying a second high frequency power to a sample table for mounting a sample thereon, the dissociation state of the plasma is controlled to a desired dissociation state by modulating the first high frequency power with a first pulse, and controlling the duty ratio of the first pulse progressively with the passage of the plasma processing time gradually.
申请公布号 JP2014204050(A) 申请公布日期 2014.10.27
申请号 JP20130080901 申请日期 2013.04.09
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MUTO SATORU;ONO TETSUO;OGOSHI YASUO;EITOKU HIROFUMI
分类号 H01L21/3065 主分类号 H01L21/3065
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