| 摘要 |
<p>Provided is a compound semiconductor device which has a preferable property and performs a normally-off operation. One embodiment of the compound semiconductor device comprises: a substrate (11); an electron transit layer (13) formed above the substrate (11); an electron supply layer (14) formed above the electron transit layer (13); a source electrode (20s) and a drain electrode (20d) formed above the electron supply layer (14); and a gate electrode (23) formed above the electron supply layer (14) between the source electrode (20s) and the drain electrode (20d). Also, The embodiment further comprises a p-type compound semiconductor layer (16) formed between the electron supply layer (14) and the gate electrode (23); and a compound semiconductor layer (18) formed between the electron supply layer (14) and the p-type compound semiconductor layer (16) and containing n-type impurities.</p> |
