| 摘要 |
PROBLEM TO BE SOLVED: To provide a flip-chip semiconductor light-emitting element which is useful in improvement in mounting reliability.SOLUTION: A flip-chip semiconductor light-emitting element comprises: an n-type GaN layer 2, an InGaN/GaN multiquantum well active layer 3 and a p-type GaN layer 4 which are formed on a sapphire substrate 1; a p-side electrode and an n-side electrode 6 which are formed on the p-type GaN layer 4 and the n-type GaN layer 2; an insulation layer 7 which is composed of silicon oxide and formed so as to cover a region other than Au bump adhesion regions of the p-side electrode 5 and the n-side electrode 6; and an uneven surface 1a having large light scattering ability and a flat surface 1b having small light scattering ability, which serve as a light extraction surface and are provided on a top face of the sapphire substrate 1. The flat surface 1b is opposite to at least two boundaries with the p-side electrode 5 and the n-side electrode 6. Boundaries of a conductor pattern of a mounting substrate corresponding to the boundaries with the p-side electrode 5 and the n-side electrode 6 can be checked from above through the flat surface 1b, and as a result, alignment inspection of a semiconductor light-emitting element after face-down mounting with the mounting substrate in an alignment inspection process can be performed promptly and successfully. |
