发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed. |
申请公布号 |
US2014312369(A1) |
申请公布日期 |
2014.10.23 |
申请号 |
US201414146689 |
申请日期 |
2014.01.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON Ju Heon;KIM Sang Yeon;LEE Seung Hwan;LEE Jin Hyun;LIM Wan Tae;HONG Hyun Kwon |
分类号 |
H01L33/36 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor light emitting device comprising:
a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed. |
地址 |
Suwon-si KR |