| 摘要 |
<p>Obtained is a semiconductor package which has little warpage and deformation and good sealing, and has a stable bonding layer between the members without a complicated manufacturing process. In bonding the members of a semiconductor package, a bonding layer which includes 98 wt% of at least one metal element having a melting point of 400°C or higher such as Ag are used, thereby obtaining a high melting point after a bonding process performed in a limited temperature range which prevents the generation of the warpage and deformation of the member, matching the thickness direction of each bonding layer in the same direction by comprising each member to make parallel all the corresponding surface of each member which becomes the bonding surface of each bonding layer to allow a pressure direction be in one direction of stacking each member when the bonding layer is formed.</p> |
