METHOD OF MANUFACTURING SUBSTRATE FOR MASK BLANK FOR EUV LITHOGRAPHY, METHOD OF MANUFACTURING SUBSTRATE WITH MULTILAYER REFLECTION FILM FOR EUV LITHOGRAPHY, METHOD OF MANUFACTURING MASK BLANK FOR EUV LITHOGRAPHY, AND METHOD OF MANUFACTURING TRANSFER MASK FOR EUV LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate for mask blank for EUV lithography capable of manufacturing a substrate of high flatness, by suppressing occurrence of waviness on the substrate surface after polishing.SOLUTION: A method of manufacturing a substrate for mask blank for EUV lithography includes a polishing step for polishing the principal surface of a substrate by setting the substrate on a surface plate including a polishing pad on the rotary surface, and then moving the substrate relatively to the polishing surface of the polishing pad, while supplying a polishing liquid containing abrasive grains of silica or colloidal silica between the polishing pad and the substrate. The polishing pad consists of at least a base material and a nap layer composed of foamed resin having an aperture in the surface. Compressive deformation amount of the polishing pad is less than 330 μm, and 100% modulus of the resin forming the nap layer is 3-14 MPa.