METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

A method for manufacturing a silicon carbide substrate 10 has the following steps. A silicon carbide single crystal substrate 1 having a first main surface 1a and a second main surface 1b opposite to the first main surface 1a is prepared. The first main surface 1a is subjected to chemical mechanical polishing. The first main surface 1a is cleaned with an acid containing sulfuric acid. After the step of cleaning with an acid containing sulfuric acid, the first main surface 1a is cleaned with an alkali containing ammonia. Thus, a method for manufacturing a silicon carbide substrate capable of achieving lowered surface roughness of an epitaxial layer can be provided.

主权项

1. A method for manufacturing a silicon carbide substrate, comprising the steps of:
preparing a silicon carbide single crystal substrate having a first main surface and a second main surface opposite to said first main surface; performing chemical mechanical polishing of said first main surface; cleaning said first main surface with an acid containing sulfuric acid; and cleaning said first main surface with an alkali containing ammonia after said step of cleaning with an acid containing sulfuric acid.