发明名称 LIGHT-EMITTING DIODE WITH SIDE-WALL BUMP STRUCTURE AND MOUNTING STRUCTURE HAVING THE SAME
摘要 A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.
申请公布号 US2014312379(A1) 申请公布日期 2014.10.23
申请号 US201414248461 申请日期 2014.04.09
申请人 LEXTAR ELECTRONICS CORPORATION 发明人 LEE Chia-En;CHEN Cheng-Hung;LIN Li-Chuan
分类号 H01L33/42;H01L33/62 主分类号 H01L33/42
代理机构 代理人
主权项 1. A light-emitting diode (LED), comprising: a substrate having a top surface, a first side surface and at least one inclined surface, wherein the top surface and the first side surface are perpendicular to each other, and the inclined surface is disposed between and connects the top surface and the first side surface; an epitaxial structure disposed on the top surface of the substrate, comprising: a N-type semiconductor layer disposed on the substrate;a light-emitting layer disposed on the N-type semiconductor layer;a P-type semiconductor layer disposed on the light-emitting layer and having an opening exposing a portion of the N-type semiconductor layer;a transparent conductive layer disposed on the P-type semiconductor layer;a P-electrode disposed on the P-type semiconductor layer; anda N-electrode disposed on the exposed portion of the N-type semiconductor layer; a first conductive bump disposed on the first side surface; a second conductive bump disposed on the same first side surface as the first conductive bump; a first extended electrode connecting the P-electrode, extending through the inclined surface, and electrically connecting the first conductive bump disposed on the first side surface; and a second extended electrode connecting the N-electrode, extending through the inclined surface, and electrically connecting the second conductive bump disposed on the first side surface.
地址 HSINCHU TW