发明名称 |
Method for Forming Projections and Depressions, Sealing Structure, and Light-Emitting Device |
摘要 |
A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included. |
申请公布号 |
US2014312374(A1) |
申请公布日期 |
2014.10.23 |
申请号 |
US201414254066 |
申请日期 |
2014.04.16 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Nishido Yusuke |
分类号 |
H01L33/58;C23F1/02 |
主分类号 |
H01L33/58 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming projections and depressions, comprising:
forming a film over a surface, the film containing a first metal and a second metal whose etching rate is lower than an etching rate of the first metal; heating the film so that the second metal segregates; selectively etching the first metal after heating the film; and selectively etching the surface using a residue containing the second metal as a resist mask. |
地址 |
Kanagawa-ken JP |