发明名称 |
Semiconductor Device And Method For Manufacturing The Same |
摘要 |
An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode. |
申请公布号 |
US2014312345(A1) |
申请公布日期 |
2014.10.23 |
申请号 |
US201414320742 |
申请日期 |
2014.07.01 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Miyanaga Akiharu;Sakata Junichiro;Sakakura Masayuki;Takahashi Masahiro;Kishida Hideyuki;Yamazaki Shunpei |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |