| 发明名称 |
BACK PLANE OF FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%. |
| 申请公布号 |
US2014312315(A1) |
申请公布日期 |
2014.10.23 |
| 申请号 |
US201314011700 |
申请日期 |
2013.08.27 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kang Il-Joon;Cho Young-Mi;Kim Tae-Young;Kim Kwang-Suk |
| 分类号 |
H01L29/786;H01L51/56;H01L29/66;H01L27/32 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A back plane for a flat-panel display device, the back plane comprising:
a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer, wherein the semiconductor layer comprises indium, tin, zinc, and gallium, and wherein an atomic concentration of the gallium is from about 5% to about 15%. |
| 地址 |
Yongin-City KR |
