发明名称 Microelectronic Displacement Damage Dose Detector
摘要 A device is described that includes sensors that are sensitive to displacement damage, and can be configured to display a characteristic damage curve. The sensors, or diodes, can be made of one or more semiconductor materials that are sensitive to displacement damage, and can be operated in dark illumination conditions. The sensors can have multiple shields of a specific or varied thickness. The shields can be formed in different configurations, though the shielding thickness can be designed to change the level of displacement damage absorbed by the sensors. The characteristic damage curve can provide a sensor response variable that displays a functional dependence on displacement damage. For example, the characteristic damage curve can provide a sensor response variable that is one or more currents measured at one or more fixed voltages, or one or more voltages measured at one or more fixed currents.
申请公布号 US2014312239(A1) 申请公布日期 2014.10.23
申请号 US201414205187 申请日期 2014.03.11
申请人 Messenger Scott R.;Cress Cory D.;Yakes Michael K.;Warner Jeffrey H.;Walters Robert J. 发明人 Messenger Scott R.;Cress Cory D.;Yakes Michael K.;Warner Jeffrey H.;Walters Robert J.
分类号 G01T1/02;G01D9/00 主分类号 G01T1/02
代理机构 代理人
主权项 1. A device, comprising one or more sensors that are sensitive to displacement damage, wherein the device is configured to display a characteristic damage curve.
地址 Baltimore MD US