| 摘要 |
<p>A self-assembly lithography process comprising: a step in which a first layer is formed on the upper side of a substrate; a step in which the first layer is irradiated with radiation, and a first region and a second region, which have different polarities from one another, are formed on the surface of the first layer; a step in which a second layer, which has a phase separation structure, is formed from a self-assembled material on the upper side of the first region, and the second region; and a step in which a portion of the second layer is removed. The present invention is: a polysiloxane composition which is used for the formation of the first layer; a hydrolysis condensate of a silane compound represented by formula (i); and a polysiloxane composition that contains an acid-generating agent, which generates acid when irradiated with radiation, a solvent, and a polysiloxane, the polarity of which is changed by the action of an acid. The solvent includes an ether-based solvent, an ester-based solvent, or an ether-based solvent and an ester-based solvent.</p> |
