GRAPHO-EPITAXY DSA PROCESS WITH DIMENSION CONTROL OF TEMPLATE PATTERN

摘要

A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.

主权项

1. A method for defining a template for directed self-assembly (DSA) materials, comprising:
patterning a resist layer using optical lithography to form a template pattern on a stack, the stack including an anti-reflection coating (ARC) and a mask layer formed over a hydrophilic layer; forming the template pattern by reactive ion etching the ARC and the mask layer to form template lines which are trimmed to less than a minimum feature size achievable by lithography; forming hydrophobic spacers on sidewalls of the template lines, the spacers including a fractional width of the minimum feature size; grafting a neutral brush layer to exposed portions of the hydrophilic layer; depositing a DSA material between the spacers of the template lines; annealing the DSA material to form material domains in a form of alternating lines of a first material and a second material, wherein the first material in contact with the spacers includes a fractional size width less than a width of the lines; adding a metal to the alternating material domains to form an etch resistant material with the second material; and removing the first material and the spacers by reactive ion etching to form a DSA template pattern for etching underlying materials.