HYDROPHOBIC GLAZING

摘要

The invention relates to a process for the manufacture of a hydrophobic glazing comprising the following successive stages:;(a) formation of a carbon-rich silicon oxycarbide (SiOxCy) layer at the surface of a substrate made of mineral glass by chemical vapor deposition (CVD) over at least a portion of the surface of said substrate by bringing said surface into contact with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4) and carbon dioxide (CO2) at a temperature of between 600° C. and 680° C., the ethylene/silane (C2H4/SiH4) ratio by volume during stage (a) being less than or equal to 3.3,;(b) formation of an SiO2 layer on the silicon oxycarbide layer deposited in stage (a) or;(b′) formation of a carbon-poor silicon oxycarbide layer exhibiting a mean C/Si ratio of less than 0.2,;(c) annealing and/or shaping the substrate obtained on conclusion of stage (b) or (b′) at a temperature of between 580° C. and 700° C.,;(d) activation of the silica layer, formed in stage (b), or of the silicon oxycarbide layer, formed in stage (b′), by plasma treatment or acidic or basic chemical treatment, and;(e) grafting, by covalent bonding, a fluorinated hydrophobic agent.;It also relates to a hydrophobic glazing, preferably a windshield, capable of being obtained by such a process.

主权项

1. A process for manufacturing a hydrophobic glazing, the process comprising:
forming a carbon-rich silicon oxycarbide (SiOxCy) layer at a surface of a mineral glass substrate by chemical vapor deposition (CVD) over at least a portion of the surface of the substrate by contacting the surface with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4) and carbon dioxide (CO2) with an ethylene/silane (C2H4/SiH4) ratio by volume of less than or equal to 3.3, at a temperature of between 600° C. and 680° C., forming a SiO2 layer on the carbon-rich silicon oxycarbide layer, or forming a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2, on the carbon-rich SiOxCy layer, thereby in either case obtaining a layered substrate, annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C., activating the SiO2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment, and grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor silicon oxycarbide layer.