发明名称 SEMICONDUCTOR APPARATUS
摘要 A semiconductor device may include first conductive patterns coupled to a common source and selection lines of a memory block formed at a substrate, second conductive patterns configured to form a bit line coupled to the memory block, and third conductive patterns configured to transmit a block selection signal to couple local lines of the memory block to global lines. The first to third conductive patterns are arranged in different layers over the memory block.
申请公布号 US2014313809(A1) 申请公布日期 2014.10.23
申请号 US201313960398 申请日期 2013.08.06
申请人 SK HYNIX INC. 发明人 SON Chang Man;LEE Chang Hyuk;LEE Go Hyun;BAEK Kwang Ho
分类号 G11C8/10 主分类号 G11C8/10
代理机构 代理人
主权项 1. A semiconductor device, comprising: first conductive patterns comprising first common source wires and first selection line wires formed over a substrate, the first common source wires being coupled to a common source, and the first selection line wires being coupled to selection lines of a memory block; second conductive patterns comprising bit line wires coupled to the memory block; and third conductive patterns comprising first block selection signal wires configured to transmit a block selection signal to cause a switching circuit to couple local lines of the memory block to global lines, wherein the first to third conductive patterns are formed in different layers over the memory block.
地址 Icheon KR