发明名称 |
BONDING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for bonding between a semiconductor chip and a substrate, which can be used in a semiconductor module that can operate at a high temperature.SOLUTION: A bonding method includes the following steps of: applying a boding agent containing Cu particles and Sn particles on a bonding surface of a semiconductor chip or a substrate; combining the bonding surface of the semiconductor chip and the bonding surface of the substrate while interposing the bonding agent; heating at a temperature higher than a melting point of Sn to perform transient liquid phase sintering of Cu and Sn in the bonding agent and make the bonding agent contain a composition containing CuSnand CuSn; and further heating to change CuSnin the bonding agent to CuSn to increase a ratio of the CuSn. |
申请公布号 |
JP2014199852(A) |
申请公布日期 |
2014.10.23 |
申请号 |
JP20130074087 |
申请日期 |
2013.03.29 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
LANG FENGQUN;NAKAGAWA HIROSHI;KATO FUMIKI;SATO HIROSHI;YAMAGUCHI HIROSHI |
分类号 |
H01L21/52;H01L25/07;H01L25/18 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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