| 摘要 |
PROBLEM TO BE SOLVED: To improve the light extraction efficiency in a semiconductor light-emitting element having an unevenness on a surface of a semiconductor layer and reflective layers.SOLUTION: A semiconductor light-emitting element 1 of the present invention has a semiconductor stacked structure including a light-emitting layer 12 sandwiched between an n-type semiconductor layer 11 and a p-type semiconductor layer 13 and extracts light from the n-type semiconductor layer 11 side of the light-emitting layer 12. The semiconductor light-emitting element 1 further has reflective layers 16 that are formed above the p-type semiconductor layer 13 and reflect the light emitted from the light-emitting layer 12. The n-type semiconductor layer 11 has an uneven region 110 for changing the route of the light on the surface opposite to the surface on which the light-emitting layer 12 is provided. At least a portion of the reflective layer 16 is formed up to directly on the end of the uneven region 110. |
