| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of a physical limit of thinning of a gate insulation layer when the gate insulation layer is a single layer of a silicon oxide film due to an increase in tunnel current, that is, gate leakage current although a minute transistor requires thinning of the gate insulation layer.SOLUTION: In a semiconductor device, gate leakage current of a minute transistor is reduced by using a high-k film having a dielectric constant of 10 and over for a gate insulation layer. By using a high-k film as a first insulation layer having a dielectric constant higher than that of a second insulation layer which contacts an oxide semiconductor layer, the gate insulation layer can be thinned to a further degree than a gate insulation layer in the case of being converted to a silicon oxide film. |
