发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high aperture ratio.SOLUTION: A semiconductor device comprises a transistor, and a capacitive element having a pair of electrodes. A channel formation region of the transistor and one electrode of the capacitive element are oxide semiconductor layers respectively formed on the same insulation surface. The other electrode of the capacitive element is a light transmissive conductive film. The one electrode of the capacitive element is electrically contacted with wiring formed on the same insulation surface as an insulation surface on which a source electrode or a drain electrode included in the transistor is formed. The other electrode of the capacitive element is electrically connected with one of the source electrode or the drain electrode included in the transistor. |
申请公布号 |
JP2014199913(A) |
申请公布日期 |
2014.10.23 |
申请号 |
JP20130268881 |
申请日期 |
2013.12.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ENDO YUTA |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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