发明名称 Wafer Backside Interconnect Structure Connected to TSVs
摘要 An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and a metal line over the conductive via. The metal line includes a dual damascene structure. The integrated circuit structure further includes a bump overlying the metal line.
申请公布号 US2014312494(A1) 申请公布日期 2014.10.23
申请号 US201414323617 申请日期 2014.07.03
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Ming-Fa;Chiou Wen-Chih;Shue Shau-Lin
分类号 H01L23/00;H01L23/48 主分类号 H01L23/00
代理机构 代理人
主权项 1. An integrated circuit structure comprising: a semiconductor substrate having a front surface and a back surface; a conductive via in the semiconductor substrate; a first metal feature extending from the back surface of the semiconductor substrate into the semiconductor substrate and contacting the conductive via; and a bump overlying and electrically connected to the first metal feature.
地址 Hsin-Chu TW
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