主权项 |
1. An imaging device, comprising:
a semiconductor substrate having a first side and a second side, opposite the first side, as a light incident side; a plurality of transistors disposed at the first side of the semiconductor substrate; and first, second, and third light reception units disposed in the semiconductor substrate, each of the first, second, and third light reception units having a respective first impurity region positioned adjacent the first side of the semiconductor substrate and a respective second impurity region positioned adjacent the second side of the semiconductor substrate; wherein:
the first and second light reception units share at least one shared transistor from the plurality of transistors;the second and third light reception units are neighboring;the second impurity regions of the first, second, and third light reception units are arranged at substantially even intervals; anda smallest distance between the first impurity regions of the first and second light reception units is different than a smallest distance between the first impurity regions of the second and third light reception units. |